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A NEW DIFFERENTIAL STACKED SPIRAL INDUCTOR WITH IMPROVED SELF-RESONANCE FREQUENCY
- Authors
- Kim, Joonchul; Nam, Byungjae; Kim, Hyeongdong
- Issue Date
- May-2011
- Publisher
- John Wiley & Sons Inc.
- Keywords
- CMOS inductor; differential stacked spiral inductor; parasitic capacitance; self-resonance frequency
- Citation
- Microwave and Optical Technology Letters, v.53, no.5, pp 1024 - 1026
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Microwave and Optical Technology Letters
- Volume
- 53
- Number
- 5
- Start Page
- 1024
- End Page
- 1026
- ISSN
- 0895-2477
1098-2760
- Abstract
- A new silicon-based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18-mu m complimentary metal-oxide semiconductor technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency, f(sr), and quality factor, Q, of the new DSSI were compared with a conventional DSSI. The f(sr) of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced.
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