Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jong-Dae | - |
dc.contributor.author | Seung, Hyun-Min | - |
dc.contributor.author | Kwon, Kyoung-Cheol | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T20:49:29Z | - |
dc.date.available | 2022-07-16T20:49:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168558 | - |
dc.description.abstract | In summary, we successfully developed the polymer nonvolatile 4F(2) memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1587/transele.E94.C.850 | - |
dc.identifier.scopusid | 2-s2.0-79955604877 | - |
dc.identifier.wosid | 000292618900032 | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.5, pp.850 - 853 | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E94C | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 850 | - |
dc.citation.endPage | 853 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | ELECTRICAL BISTABILITY | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordAuthor | polymer nonvolatile | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.identifier.url | https://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_850/_article | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.