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Effect of NH4OH Concentration on Surface Qualities of a Silicon Wafer after Final-Touch Polishing

Authors
Hwang, Hee-SubPark, Jin-HyungChoi, Eun-SuckAhn, Jin-WooPark, Jea-Gun
Issue Date
Apr-2011
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.6, pp.H641 - H644
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume
158
Number
6
Start Page
H641
End Page
H644
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168717
DOI
10.1149/1.3571006
ISSN
0013-4651
Abstract
The effect of NH4OH concentration on surface qualities, namely, haze level, roughness, and number of remaining particles after final-touch polishing, of silicon wafers was investigated. This investigation found that the surface qualities of the final touch polished silicon wafers were degraded by the agglomeration of colloidal silica abrasives and a weakly formed passivation layer on the silicon-wafer surface at lower NH4OH concentration and enhanced with increasing NH4OH concentration in alkaline slurry. These results were confirmed by measuring the secondary-abrasive size, zeta potential of the colloidal silica abrasive in the slurry, and X-ray photoelectron spectroscopy on the silicon-wafer surface.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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