Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells

Full metadata record
DC Field Value Language
dc.contributor.authorNam, Woo-Sik-
dc.contributor.authorSeo, Sung-Ho-
dc.contributor.authorPark, Jea-Gun-
dc.date.accessioned2022-07-16T21:02:59Z-
dc.date.available2022-07-16T21:02:59Z-
dc.date.created2021-05-12-
dc.date.issued2011-04-
dc.identifier.issn1099-0062-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168720-
dc.description.abstractWe investigated the effect of small-molecule layer thickness on nonvolatile memory characteristics such as memory margin, retention-time, and multi-level memory-cell operation for cross-bar 4F(2) small-molecule memory-cells embedded with Ni nanocrsystals surrounded by a NiO tunneling barrier. For a 50-nm small-molecule layer, the memory-cell demonstrated a memory margin of similar to 7.02 x 10(3) and a retention-time of similar to 10(5) s at 85 degrees C for four current levels. However, these nonvolatile memory characteristics worsened when the small-molecule layer thickness increased above 50-nm, and they eventually disappeared at similar to 140-nm. This is related to current conduction mechanisms, such as space-charge-limited-current and thermionic-field-emission-current, which depend on small-molecule layer thickness.-
dc.language영어-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.titleEffect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Jea-Gun-
dc.identifier.doi10.1149/1.3582801-
dc.identifier.scopusid2-s2.0-79959563101-
dc.identifier.wosid000290276400016-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.7, pp.H277 - H280-
dc.relation.isPartOfELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume14-
dc.citation.number7-
dc.citation.startPageH277-
dc.citation.endPageH280-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusBISTABILITY-
dc.subject.keywordPlusSpace-charge-limited current-
dc.subject.keywordPlusTunneling barrier-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/1.3582801-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Park, Jea  Gun photo

Park, Jea Gun
COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE