Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells
DC Field | Value | Language |
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dc.contributor.author | Nam, Woo-Sik | - |
dc.contributor.author | Seo, Sung-Ho | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T21:02:59Z | - |
dc.date.available | 2022-07-16T21:02:59Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168720 | - |
dc.description.abstract | We investigated the effect of small-molecule layer thickness on nonvolatile memory characteristics such as memory margin, retention-time, and multi-level memory-cell operation for cross-bar 4F(2) small-molecule memory-cells embedded with Ni nanocrsystals surrounded by a NiO tunneling barrier. For a 50-nm small-molecule layer, the memory-cell demonstrated a memory margin of similar to 7.02 x 10(3) and a retention-time of similar to 10(5) s at 85 degrees C for four current levels. However, these nonvolatile memory characteristics worsened when the small-molecule layer thickness increased above 50-nm, and they eventually disappeared at similar to 140-nm. This is related to current conduction mechanisms, such as space-charge-limited-current and thermionic-field-emission-current, which depend on small-molecule layer thickness. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1149/1.3582801 | - |
dc.identifier.scopusid | 2-s2.0-79959563101 | - |
dc.identifier.wosid | 000290276400016 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.7, pp.H277 - H280 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | H277 | - |
dc.citation.endPage | H280 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordPlus | Space-charge-limited current | - |
dc.subject.keywordPlus | Tunneling barrier | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3582801 | - |
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