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The thermal treatment effects of CrN buffer layer on crystal quality of Zn-polar ZnO films
- Authors
- Park, Jinsub; Minegishi, Tsutomu; Park, Seung Hwan; Hong, Soon-Ku; Chang, Jan-Hau; Yao, Takafumi
- Issue Date
- Mar-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Annealing; Atomic Force Microscopy; Bugger layer; Crystal Structure; Molecular Beam Epitaxy; Surface morphology; X-ray diffraction; Zinc Oxide
- Citation
- THIN SOLID FILMS, v.519, no.10, pp.3417 - 3420
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 10
- Start Page
- 3417
- End Page
- 3420
- ISSN
- 0040-6090
- Abstract
- We report on the annealing effects of CrN buffer layers on the crystal quality of Zn-polar ZnO films grown by plasma assisted molecular beam epitaxy. The high-temperature (HT) annealing of CrN buffer layer improved the crystallinity of ZnO films. The full width at half maximums of (0002) and (10-11) ZnO omega-scan X-ray diffraction show 574 and 1296 arcsec, respectively, which show the 3 and 2 times narrower values than those of ZnO films without the annealing process. Moreover, the HT annealing can be effective method to improve the surface smoothness of ZnO film and reduce the crystal tilting.
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)