Vertical Transfer of Uniform Silicon Nanowire Arrays via Crack Formation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Weisse, Jeffrey M. | - |
dc.contributor.author | Kim, Dong Rip | - |
dc.contributor.author | Lee, Chi Hwan | - |
dc.contributor.author | Zheng, Xiaolin | - |
dc.date.accessioned | 2022-07-16T21:20:53Z | - |
dc.date.available | 2022-07-16T21:20:53Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168800 | - |
dc.description.abstract | Vertical transfer of silicon nanowire (SiNW) arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack throughout SiNWs. The crack is formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. The crack formation is related to the delamination, redistribution, and reattachment of the Ag film during the water soaking and subsequent wet etching steps. Moreover, the crack facilitates embedding SiNWs inside polymers. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Vertical Transfer of Uniform Silicon Nanowire Arrays via Crack Formation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Dong Rip | - |
dc.identifier.doi | 10.1021/nl104362e | - |
dc.identifier.scopusid | 2-s2.0-79952607436 | - |
dc.identifier.wosid | 000288061500068 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.11, no.3, pp.1300 - 1305 | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1300 | - |
dc.citation.endPage | 1305 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SI WIRE ARRAYS | - |
dc.subject.keywordPlus | DEVICE INTEGRATION | - |
dc.subject.keywordPlus | METAL PARTICLES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DIAMETER | - |
dc.subject.keywordAuthor | Nanowire transfer | - |
dc.subject.keywordAuthor | silicon nanowire | - |
dc.subject.keywordAuthor | crack formation | - |
dc.subject.keywordAuthor | Ag etching | - |
dc.subject.keywordAuthor | embedding nanowires | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nl104362e | - |
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