Vertical Transfer of Uniform Silicon Nanowire Arrays via Crack Formation
- Authors
- Weisse, Jeffrey M.; Kim, Dong Rip; Lee, Chi Hwan; Zheng, Xiaolin
- Issue Date
- Mar-2011
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Nanowire transfer; silicon nanowire; crack formation; Ag etching; embedding nanowires
- Citation
- NANO LETTERS, v.11, no.3, pp.1300 - 1305
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 11
- Number
- 3
- Start Page
- 1300
- End Page
- 1305
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168800
- DOI
- 10.1021/nl104362e
- ISSN
- 1530-6984
- Abstract
- Vertical transfer of silicon nanowire (SiNW) arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack throughout SiNWs. The crack is formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. The crack formation is related to the delamination, redistribution, and reattachment of the Ag film during the water soaking and subsequent wet etching steps. Moreover, the crack facilitates embedding SiNWs inside polymers.
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