Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure
- Authors
- Lee, Dong Uk; Kim, Eun Kyu; Cho, Won-Ju; Kim, Young-Ho
- Issue Date
- Mar-2011
- Publisher
- SPRINGER HEIDELBERG
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.4, pp.933 - 938
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 102
- Number
- 4
- Start Page
- 933
- End Page
- 938
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168916
- DOI
- 10.1007/s00339-011-6275-6
- ISSN
- 0947-8396
- Abstract
- A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from -7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler-Nordheim tunneling, space-charge-limited current, and the migration of O2- ions.
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