Charge loss in WSi2 nanocrystals nonvolatile memory with SiO2/Si3N4/SiO2 tunnel layer
- Authors
- Lee, Dong Uk; Lee, Hyo Jun; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju
- Issue Date
- Mar-2011
- Publisher
- ELSEVIER
- Keywords
- Nanocrystal; Non-volatile memory; WSi2; Quantum dots
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.2, pp.E6 - E9
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 2
- Start Page
- E6
- End Page
- E9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168938
- DOI
- 10.1016/j.cap.2010.12.036
- ISSN
- 1567-1739
- Abstract
- We have studied the charge loss in WSi2 nanocrystals nonvolatile memory device with silicon oxide-nitride-oxide (SiO2: 2 nm/Si3N4:2 nm/SiO2:3 nm) tunnel layer. The WSi2 nanocrystals of 2.5 nm diameters and 3.6 x 10(12) cm(-2) density were formed between tunnel and control oxide layers. When the programming/erasing voltages were applied at 10 V/-10 V during 500 ms, the memory window was measured about 2.7 V and maintained at about 1.1 V after 10(4) s at 25 degrees C. In this device, the activation energies for the charge loss rates from 10% to 50% in compare to an initial charge were about 0.14 eV. This charge loss could be caused by a cycling-induced oxide damage or tunnel oxide break down. Therefore, it has a feasibility of application to highly-integrate nonvolatile memory after optimize the charge loss effect by thermal stress and improve the tunnel layer stability.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168938)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.