Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2-x/Pt matrix
DC Field | Value | Language |
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dc.contributor.author | Bae, Yoon Cheol | - |
dc.contributor.author | Lee, Ah Rahm | - |
dc.contributor.author | Kwak, June Sik | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-16T21:35:15Z | - |
dc.date.available | 2022-07-16T21:35:15Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168939 | - |
dc.description.abstract | The resistive switching characteristics of poly-crystal rutile TiO2-x thin film between Pt electrodes with different oxygen contents were studied. Current level analyses and dielectric material analyses of TiO2-x, X-ray diffraction, atomic force microscopy, and Rutherford backscattering spectrometry were performed to explain the possible nature of the stable resistive switching phenomenon at specific oxygen contents, along with impedance spectroscopy analysis. The experimental observations demonstrate that the distributions of the set/reset voltage and on/off current level strongly depend on the oxygen content of the TiO2-x layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2-x/Pt matrix | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1016/j.cap.2010.11.125 | - |
dc.identifier.scopusid | 2-s2.0-79960927022 | - |
dc.identifier.wosid | 000294208600015 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.2, pp.E66 - E69 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | E66 | - |
dc.citation.endPage | E69 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173911000356?via%3Dihub | - |
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