Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, In-Sung | - |
dc.contributor.author | Choi, Youngjae | - |
dc.contributor.author | Nichols, William T. | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2022-07-16T21:35:27Z | - |
dc.date.available | 2022-07-16T21:35:27Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168941 | - |
dc.description.abstract | The effects of water vapor treatment (WVT) on a Ge substrate were investigated in order to understand the improved electrical properties of Pt/HfO2/Ge metal-oxide-semiconductor (MOS) capacitors. The WVT and HfO2 deposition were performed in situ using an atomic layer deposition technique to avoid air exposure. As a result, the WVT on cleaned Ge substrates reduced the native oxide effectively and enhanced the initial growth of the HfO2 film. The improved interface qualities with WVT enhanced Ge-based device performance through a smoother capacitance-voltage curve, less increase in the inversion capacitance, and lower density of interface states. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1063/1.3562015 | - |
dc.identifier.scopusid | 2-s2.0-79952651989 | - |
dc.identifier.wosid | 000288277200059 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.10, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | KAPPA GATE DIELECTRICS | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | GE(100) | - |
dc.subject.keywordPlus | GROWTH | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3562015 | - |
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