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Atomic structural variations of [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments

Authors
Yuk, Jong MinLee, Jeong YongLee, ZonghoonNo, Young SooKim, Tae-WonKim, Jin-YoungChoi, Won Kook
Issue Date
Mar-2011
Publisher
ELSEVIER
Keywords
ZnO; Si; Atomic structure; Grain boundary
Citation
APPLIED SURFACE SCIENCE, v.257, no.11, pp.4817 - 4820
Indexed
SCIE
SCOPUS
Journal Title
APPLIED SURFACE SCIENCE
Volume
257
Number
11
Start Page
4817
End Page
4820
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168942
DOI
10.1016/j.apsusc.2010.12.083
ISSN
0169-4332
Abstract
ZnO thin films were deposited on n-Si substrates by using plasma-assisted molecular beam epitaxy. Plane-view zero-loss energy filtered transmission electron microscopy (TEM) images showed that the grain boundaries between large and small grains changed from the curve to the straight shape during ZnO grain growth. The [0 0 0 1]-tilt grain boundary of as-grown ZnO thin films changed from the zigzag facet planes into the symmetric tilt grain boundary through the asymmetric tilt grain boundary with periodic {0 1 (1) over bar 0}/{3 5 (8) over bar 0} flat planes. Such an atomic structural variation of grain boundary changes from curved grain boundaries to flat shape was due to decrease of total boundary energy during grain growth. The atomic structural variations of the [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments are described on the basis of the TEM images.
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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