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Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices

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dc.contributor.authorChoi, Changhwan-
dc.contributor.authorLee, Kam-Leung-
dc.contributor.authorNarayanan, Vijay-
dc.date.accessioned2022-07-16T21:36:00Z-
dc.date.available2022-07-16T21:36:00Z-
dc.date.issued2011-03-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168947-
dc.description.abstractThe impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high-k gate dielectrics and metal gate was investigated by monitoring flatband voltage (V(FB)) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive V(FB) shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [V(o)(++)] generation in high-k dielectrics due to the shorter thermal budget. Processing parameters including high-k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different V(FB) behaviors.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Institute of Physics-
dc.titleImpact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.3570655-
dc.identifier.scopusid2-s2.0-79953874779-
dc.identifier.wosid000288808200093-
dc.identifier.bibliographicCitationApplied Physics Letters, v.98, no.12, pp 1 - 4-
dc.citation.titleApplied Physics Letters-
dc.citation.volume98-
dc.citation.number12-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusDielectric devices-
dc.subject.keywordPlusDielectric materials-
dc.subject.keywordPlusElectric properties-
dc.subject.keywordPlusGates (transistor)-
dc.subject.keywordPlusMetals-
dc.subject.keywordPlusOxygen-
dc.subject.keywordPlusOxygen vacancies-
dc.subject.keywordPlusRapid thermal processing-
dc.subject.keywordPlusSemiconductor switches-
dc.subject.keywordPlusTitanium nitride-
dc.subject.keywordPlusCap deposition-
dc.subject.keywordPlusDynamic surface-
dc.subject.keywordPlusElectrical property-
dc.subject.keywordPlusEquivalent oxide thickness-
dc.subject.keywordPlusFlat-band voltage-
dc.subject.keywordPlusGate stacks-
dc.subject.keywordPlusHigh-k dielectric-
dc.subject.keywordPlusHigh-k gate dielectrics-
dc.subject.keywordPlusMetal gate-
dc.subject.keywordPlusMetal oxide semiconductor-
dc.subject.keywordPlusP-type-
dc.subject.keywordPlusPositively charged-
dc.subject.keywordPlusProcessing parameters-
dc.subject.keywordPlusRapid thermal anneal-
dc.subject.keywordPlusThermal budget-
dc.subject.keywordPlusThermally induced-
dc.subject.keywordPlusTiN metal gate-
dc.subject.keywordPlusVFB shift-
dc.subject.keywordPlusGate dielectrics-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.3570655-
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