Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
DC Field | Value | Language |
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dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Lee, Kam-Leung | - |
dc.contributor.author | Narayanan, Vijay | - |
dc.date.accessioned | 2022-07-16T21:36:00Z | - |
dc.date.available | 2022-07-16T21:36:00Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168947 | - |
dc.description.abstract | The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high-k gate dielectrics and metal gate was investigated by monitoring flatband voltage (V(FB)) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive V(FB) shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [V(o)(++)] generation in high-k dielectrics due to the shorter thermal budget. Processing parameters including high-k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different V(FB) behaviors. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1063/1.3570655 | - |
dc.identifier.scopusid | 2-s2.0-79953874779 | - |
dc.identifier.wosid | 000288808200093 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.12, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Dielectric devices | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordPlus | Gates (transistor) | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Oxygen | - |
dc.subject.keywordPlus | Oxygen vacancies | - |
dc.subject.keywordPlus | Rapid thermal processing | - |
dc.subject.keywordPlus | Semiconductor switches | - |
dc.subject.keywordPlus | Titanium nitride | - |
dc.subject.keywordPlus | Cap deposition | - |
dc.subject.keywordPlus | Dynamic surface | - |
dc.subject.keywordPlus | Electrical property | - |
dc.subject.keywordPlus | Equivalent oxide thickness | - |
dc.subject.keywordPlus | Flat-band voltage | - |
dc.subject.keywordPlus | Gate stacks | - |
dc.subject.keywordPlus | High-k dielectric | - |
dc.subject.keywordPlus | High-k gate dielectrics | - |
dc.subject.keywordPlus | Metal gate | - |
dc.subject.keywordPlus | Metal oxide semiconductor | - |
dc.subject.keywordPlus | P-type | - |
dc.subject.keywordPlus | Positively charged | - |
dc.subject.keywordPlus | Processing parameters | - |
dc.subject.keywordPlus | Rapid thermal anneal | - |
dc.subject.keywordPlus | Thermal budget | - |
dc.subject.keywordPlus | Thermally induced | - |
dc.subject.keywordPlus | TiN metal gate | - |
dc.subject.keywordPlus | VFB shift | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3570655 | - |
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