Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements
DC Field | Value | Language |
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dc.contributor.author | Manh-Cuong Nguyen | - |
dc.contributor.author | On, Nuri | - |
dc.contributor.author | Ji, Hyungmin | - |
dc.contributor.author | An Hoang-Thuy Nguyen | - |
dc.contributor.author | Choi, Sujin | - |
dc.contributor.author | Cheon, Jonggyu | - |
dc.contributor.author | Yu, Kyoung-Moon | - |
dc.contributor.author | Cho, Seong-Yong | - |
dc.contributor.author | Kim, JinHyun | - |
dc.contributor.author | Kim, Sangwoo | - |
dc.contributor.author | Jeong, Jaekyeong | - |
dc.contributor.author | Choi, Rino | - |
dc.date.accessioned | 2021-08-02T13:28:20Z | - |
dc.date.available | 2021-08-02T13:28:20Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16902 | - |
dc.description.abstract | The self-heating effect (SHE) in top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was examined systematically using short electrical pulse measurement methods. The temperature dependence of the pulse measurements of IGZO TFTs revealed a significant increase in temperature during the measurements, suggesting that conventional measurements can overestimate the device performance significantly. The effective temperature was introduced and extracted for IGZO TFTs at various heating powers and ambient temperatures. The short sampling time was determined to be a key in characterizing the intrinsic device properties that are not influenced by the SHE. The cooling behavior after self-heatingwas also examined using multipulse measurements. Because heating and cooling are significant even in a very short time, it is essential to consider the operation condition of the devices when characterizing TFTs to estimate the precise performance and reliability in a real operation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jaekyeong | - |
dc.identifier.doi | 10.1109/TED.2018.2826072 | - |
dc.identifier.scopusid | 2-s2.0-85045767687 | - |
dc.identifier.wosid | 000432462200064 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.6, pp.2492 - 2497 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 65 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2492 | - |
dc.citation.endPage | 2497 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THERMAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | SOI MOSFETS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | BORON-NITRIDE | - |
dc.subject.keywordPlus | BIAS STRESS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordAuthor | Effective temperature | - |
dc.subject.keywordAuthor | fast current-voltage (I-V) | - |
dc.subject.keywordAuthor | fast transient | - |
dc.subject.keywordAuthor | heat dissipation | - |
dc.subject.keywordAuthor | In-Ga-Zn-O (IGZO) | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor | - |
dc.subject.keywordAuthor | pulse I-V | - |
dc.subject.keywordAuthor | self-aligned | - |
dc.subject.keywordAuthor | self-heat effect | - |
dc.subject.keywordAuthor | single pulse | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | top gate | - |
dc.subject.keywordAuthor | waveform capture | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8341848 | - |
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