Ruthenium based metals using atomic vapor deposition for gate electrode applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Ando, Takashi | - |
dc.contributor.author | Narayanan, Vijay | - |
dc.date.accessioned | 2022-07-16T21:58:48Z | - |
dc.date.available | 2022-07-16T21:58:48Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169139 | - |
dc.description.abstract | The impacts of ruthenium-based metal gate electrodes (Ru, RuOx, RuSiOx) with atomic vapor deposition (AVD) on flatband voltage (V-FB) and equivalent oxide thickness (EOT) are demonstrated using a low temperature (<400 degrees C) process. Increasing thickness of Ru and RuOx exhibits higher V-FB, attributed to filling oxygen vacancies [V-o] in high-k gate dielectric with oxygen supplied from AVD metal gate electrodes upon annealing. Ru is efficient to attain a higher work-function and thinner EOT compared to RuOx and RuSiOx. Subsequent physical-vapor-deposition (PVD) TiN capping on AVD metals blocks oxygen out-diffusion, leading to higher V-FB than PVD W or AVD TiN capping. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Ruthenium based metals using atomic vapor deposition for gate electrode applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1063/1.3559929 | - |
dc.identifier.scopusid | 2-s2.0-79952092004 | - |
dc.identifier.wosid | 000287764300096 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.8, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | RU | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3559929 | - |
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