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MoO_3 분말의 수소환원을 통한 CIGS계 후면 전극용 Mo 박막제조Fabrication of Mo Thin Film by Hydrogen Reduction of MoO_3 Powder for Back Contact Electrode of CIGS
- Other Titles
- Fabrication of Mo Thin Film by Hydrogen Reduction of MoO_3 Powder for Back Contact Electrode of CIGS
- Authors
- Jo, Tae Sun; Kim, Se Hoon; Kim, Young Do
- Issue Date
- Feb-2011
- Publisher
- 대한금속·재료학회
- Keywords
- solar cells; vapor deposition; hydrogen reduction; electrical properties; conductivity/resistivity
- Citation
- 대한금속·재료학회지, v.49, no.2, pp 187 - 191
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- 대한금속·재료학회지
- Volume
- 49
- Number
- 2
- Start Page
- 187
- End Page
- 191
- ISSN
- 1738-8228
2288-8241
- Abstract
- In order to obtain a suitable back contacting electrode for Cu(InGa)Se-2-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of MoO3 powder. A MoO2 thin film was successfully deposited on substrates by using the CVT of volatile MoO3(OH)(2) at 550 degrees C for 60 min in a H-2 atmosphere. The Mo thin film was obtained by reduction of MoO2 at 650 degrees C in a H-2 atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately 1 Omega/sq.
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Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
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