The Impact of Passivation Layers on the Negative Bias Temperature Illumination Instability of Ha-In-Zn-O TFT
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sun-Il | - |
dc.contributor.author | Kim, Sang Wook | - |
dc.contributor.author | Kim, Chang Jung | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T22:12:30Z | - |
dc.date.available | 2022-07-16T22:12:30Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169184 | - |
dc.description.abstract | We systematically investigated the role of the SiOx and/or SiONx passivation layer in the amorphous hafnium indium zinc oxide (HIZO) thin film transistors (TFTs) under a negative bias temperature illumination stress (NBTIS) condition. The device instability of the TFTs with a SiOx passivation layer [threshold voltage shift (Delta V-th) similar to -6.5 V] is better than that of the TFTs with a SiONx passivation layer (Delta V-th similar to -8.5 V) in the atmosphere. However, the devices with the SiOx passivation layer showed different instabilities in the atmosphere (-6.5 V) and N-2 ambient (-5.5 V). The film analysis demonstrated the higher water permeability of the SiOx film and higher hydrogen content of the SiONx films, suggesting the existence of not only water related positive charge traps but also hydrogen related positive charge traps under NBTIS conditions. After including the SiOx (inner)/SiONx (outer) passivation layers, the instability of the amorphous HIZO device was drastically improved by the suppression of the positive charge trapping sites under the NBTIS conditions. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | The Impact of Passivation Layers on the Negative Bias Temperature Illumination Instability of Ha-In-Zn-O TFT | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1149/1.3519987 | - |
dc.identifier.scopusid | 2-s2.0-78650726751 | - |
dc.identifier.wosid | 000285765600080 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.2, pp.H115 - H118 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 158 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | H115 | - |
dc.citation.endPage | H118 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3519987 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.