Investigation of Light-Induced Bias Instability in Hf-In-Zn-O Thin Film Transistors: A Cation Combinatorial Approach
DC Field | Value | Language |
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dc.contributor.author | Kwon, Jang-Yeon | - |
dc.contributor.author | Jung, Ji Sim | - |
dc.contributor.author | Son, Kyoung Seok | - |
dc.contributor.author | Lee, Kwang-Hee | - |
dc.contributor.author | Park, Joon Seok | - |
dc.contributor.author | Kim, Tae Sang | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.contributor.author | Koo, Bonwon | - |
dc.contributor.author | Lee, Sangyun | - |
dc.date.accessioned | 2022-07-16T22:12:34Z | - |
dc.date.available | 2022-07-16T22:12:34Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169185 | - |
dc.description.abstract | We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Investigation of Light-Induced Bias Instability in Hf-In-Zn-O Thin Film Transistors: A Cation Combinatorial Approach | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1149/1.3552700 | - |
dc.identifier.scopusid | 2-s2.0-79955151187 | - |
dc.identifier.wosid | 000287972300059 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.4, pp.H433 - H437 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 158 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | H433 | - |
dc.citation.endPage | H437 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3552700 | - |
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