Photopatternable Poly(4-styrene sulfonic acid)-Wrapped MWNT Thin-Film Source/Drain Electrodes for Use in Organic Field-Effect Transistors
- Authors
- Hong, Kipyo; Kim, Se Hyun; Yang, Chanwoo; Yun, Won Min; Nam, Sooji; Jang, Jaeyoung; Park, Chanjun; Park, Chan Eon
- Issue Date
- Jan-2011
- Publisher
- AMER CHEMICAL SOC
- Keywords
- solution-processable; photopatternable; source/drain electrode; carbon nanotube; organic field-effect transistor; contact resistance
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.3, pp.74 - 79
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 3
- Start Page
- 74
- End Page
- 79
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169190
- DOI
- 10.1021/am1008826
- ISSN
- 1944-8244
- Abstract
- We describe the cross linking of poly(4-styrene-sulfonic cid) (PSS) by exposure to ultra violet (UV) light (lambda = 255 nm) under a vacuum. Fourier transform infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the photo-crosslinking of PSS resulted from coupling between radicals that were generated in the polymer chains by UV excitation.The photo-cross-linkable characteristics of PSS Were employed to fabricate solution-processable, Photopatternable, and conductive PSS-wrapped multiwalled carbon nanotube (MWNT) composite thin films by wrapping MWNTs with PSS in water. During photo-cross-linking, the work function of the PSS-wrapped MWNTs decreased from 4.83 to 4.53 eV following cleavage of a significant number of sulfonic acid groups. Despite the decreased work function of the PSS wrapped MWNTs the photopatterned PSS wrapped MWNTs produced good source/drain electrodes for OFETs, yeilding a mobility (0.134 +/- 0.056 cm(2)/(V s)) for the TIPS-PEN field-effect transistors fabricated using PSS-wrapped MWNTs as source/drain electrodes that was higher the mobility of gold-based transistors (0.01,1 +/- 0.004 cm(2)/(V s))
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