Solvent-free solution processed passivation layer for improved long-term stability of organic field-effect transistorsopen access
- Authors
- Nam, Sooji; Jang, Jaeyoung; Kim, Kihyun; Yun, Won Min; Chung, Dae Sung; Hwang, Jihun; Kwon, Oh Kwan; Chang, Taihyun; Park, Chan Eon
- Issue Date
- Jan-2011
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.21, no.3, pp.775 - 780
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY
- Volume
- 21
- Number
- 3
- Start Page
- 775
- End Page
- 780
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169192
- DOI
- 10.1039/c0jm00898b
- ISSN
- 0959-9428
- Abstract
- In an effort to realize organic field-effect transistors (OFETs) that are stable over long periods of time, we have designed an organic-inorganic hybrid passivation material (TGD622t) prepared via a nonhydrolytic sol-gel process that does not require the use of solvents. Fourier-transform infrared spectroscopy, atomic force microscopy, and UV-visible spectroscopy demonstrated the high density and low porosity of the organic-inorganic hybrid transparent TGD622t film after low-temperature curing (below 100 degrees C). The dense TGD622t passivation layer, which exhibited a water vapor transmission rate (WVTR) of 0.434 g m(-2) per day, effectively protected the poly[9,9-dioctylfluorenyl-2,7- diyl]-co-(bithiophene)]-based OFETs from humidity and oxygen in ambient air, resulting in a much more robust OFET performance with long-term stability relative to the operation of unpassivated devices.
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