Variations in the Memory Capability of Nonvolatile Memory Devices Fabricated Using Hybrid Composites of InP Nanoparticles and a Polystyrene Layer Due to the Scale-Down
DC Field | Value | Language |
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dc.contributor.author | Lee, SH | - |
dc.contributor.author | Yun, DY | - |
dc.contributor.author | Jung, JH | - |
dc.contributor.author | You, JH | - |
dc.contributor.author | Kim, TW | - |
dc.contributor.author | Ryu, E | - |
dc.contributor.author | Kim, SW | - |
dc.date.accessioned | 2022-07-16T22:18:24Z | - |
dc.date.available | 2022-07-16T22:18:24Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169247 | - |
dc.description.abstract | InP nanoparticles were formed using a solution method, and the InP nanoparticles that were embedded in a polystyrene (PS) layer were formed using the spin-coating method. The transmission electron microscopy images showed that the InP nanoparticles were randomly distributed in the PS layer. The measured capacitance voltage (C-V) of the Al/InP nanoparticles embedded in the PS layer/PS/p-Si(100) device at 300 K showed a clockwise hysteresis of the C-V curve. Based on the C-V results, the origin of variations in the memory storage of nonvolatile memory devices that were fabricated using InP nanoparticles embedded in a PS layer due to the scale-down was described. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Variations in the Memory Capability of Nonvolatile Memory Devices Fabricated Using Hybrid Composites of InP Nanoparticles and a Polystyrene Layer Due to the Scale-Down | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, TW | - |
dc.identifier.doi | 10.1166/jnn.2011.3172 | - |
dc.identifier.scopusid | 2-s2.0-84863035275 | - |
dc.identifier.wosid | 000286344400074 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.1, pp.449 - 452 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 449 | - |
dc.citation.endPage | 452 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordPlus | Nanoparticles | - |
dc.subject.keywordPlus | Nonvolatile storage | - |
dc.subject.keywordPlus | Polystyrenes | - |
dc.subject.keywordPlus | Transmission electron microscopy | - |
dc.subject.keywordAuthor | Nonvolatile Memory Devices | - |
dc.subject.keywordAuthor | Polystyrene | - |
dc.subject.keywordAuthor | InP Nanoparticles | - |
dc.subject.keywordAuthor | Solution Method | - |
dc.subject.keywordAuthor | Scale-Down | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00074 | - |
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