Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate
DC Field | Value | Language |
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dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Narayanan, Vijay | - |
dc.date.accessioned | 2022-07-16T22:23:39Z | - |
dc.date.available | 2022-07-16T22:23:39Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169291 | - |
dc.description.abstract | We have investigated the effects of millisecond flash annealing (ms-FLA) on the electrical properties of p-type metal-oxide-semiconductor (pMOS) devices with high-k gate dielectrics with TiN gate. Compared to conventional rapid thermal annealing (RTA), ms-FLA improves pMOS characteristics such as positive flatband voltage (V-FB) shift along with scaled equivalent oxide thickness (EOT) and negligible gate leakage degradation, attributed to the suppressed oxygen vacancies [V-o(2+)] generation in high-k gate dielectrics due to a shorter thermal budget. Al-containing capping layers, TiN thickness, and Si cap deposition temperatures with ms-FLA substantially affect thermally generated [V-o(2+)], leading to different V-FB and EOT. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1149/1.3566073 | - |
dc.identifier.scopusid | 2-s2.0-79953779540 | - |
dc.identifier.wosid | 000289165400023 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.6, pp.H241 - H243 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | H241 | - |
dc.citation.endPage | H243 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Dielectric devices | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordPlus | Gates (transistor) | - |
dc.subject.keywordPlus | Metal analysis | - |
dc.subject.keywordPlus | Oxygen | - |
dc.subject.keywordPlus | Oxygen vacancies | - |
dc.subject.keywordPlus | Rapid thermal annealing | - |
dc.subject.keywordPlus | Rapid thermal processing | - |
dc.subject.keywordPlus | Titanium nitride | - |
dc.subject.keywordPlus | Cap deposition | - |
dc.subject.keywordPlus | Capping layer | - |
dc.subject.keywordPlus | Electrical property | - |
dc.subject.keywordPlus | Equivalent oxide thickness | - |
dc.subject.keywordPlus | Flash annealing | - |
dc.subject.keywordPlus | Flat-band voltage | - |
dc.subject.keywordPlus | Flat-band voltage shift | - |
dc.subject.keywordPlus | Gate leakages | - |
dc.subject.keywordPlus | High-k gate dielectrics | - |
dc.subject.keywordPlus | Metal oxide semiconductor | - |
dc.subject.keywordPlus | P-type | - |
dc.subject.keywordPlus | Thermal budget | - |
dc.subject.keywordPlus | TiN gates | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3566073 | - |
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