Effect of adding an insulator between metal and semiconductor layers on contact resistance
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Lim, Heewoo | - |
dc.contributor.author | Kweon, Youngkyun | - |
dc.contributor.author | Bang, Minwook | - |
dc.contributor.author | Kwon, Saejin | - |
dc.contributor.author | Kim, Bumsik | - |
dc.contributor.author | Cho, Haewon | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T13:29:54Z | - |
dc.date.available | 2021-08-02T13:29:54Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16985 | - |
dc.description.abstract | The authors investigated the effective Schottky barrier heights of metal and silicon contacts after insertion of insulator layers with different conduction band offsets. A decrease in Schottky barrier height after insertion of an insulator layer was observed. In particular, the Schottky barrier height of metal/semiconductor contacts was lowest when a ZnO layer was inserted compared to the other insulator layer types, because the conduction band offset between ZnO and silicon was the lowest among those measured. The authors also investigated current density as a function of the thickness of the insulator and doping concentration of silicon. Published by the AVS. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Effect of adding an insulator between metal and semiconductor layers on contact resistance | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1116/1.5020310 | - |
dc.identifier.scopusid | 2-s2.0-85045952849 | - |
dc.identifier.wosid | 000432972200054 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 36 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Conduction bands | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | II-VI semiconductors | - |
dc.subject.keywordPlus | Schottky barrier diodes | - |
dc.subject.keywordPlus | Semiconductor doping | - |
dc.subject.keywordPlus | Semiconductor metal boundaries | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Conduction band offset | - |
dc.subject.keywordPlus | Doping concentration | - |
dc.subject.keywordPlus | Insulator layer | - |
dc.subject.keywordPlus | Schottky barrier heights | - |
dc.subject.keywordPlus | Semiconductor layers | - |
dc.subject.keywordPlus | Wide band gap semiconductors | - |
dc.identifier.url | https://pubs.aip.org/avs/jvb/article/36/3/032202/591715/Effect-of-adding-an-insulator-between-metal-and | - |
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