Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mishu, Pujan K. C. | - |
dc.contributor.author | Cho, Moon-Kyu | - |
dc.contributor.author | Khachatrian, Ani | - |
dc.contributor.author | Buchner, Stephen P. | - |
dc.contributor.author | McMorrow, Dale | - |
dc.contributor.author | Paki, Pauline | - |
dc.contributor.author | Cressler, John D. | - |
dc.contributor.author | Song, Ickhyun | - |
dc.date.accessioned | 2022-07-19T04:55:42Z | - |
dc.date.available | 2022-07-19T04:55:42Z | - |
dc.date.created | 2022-06-03 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/170097 | - |
dc.description.abstract | The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio-frequency (RF) voltage-controlled oscillators (VCOs) have been investigated and the performance of proposed VCOs (IM VCOs) is compared with VCOs with conventional forward-mode (FM) SiGe-HBTs (FM VCOs). Where the high-frequency performance of IM VCOs is inevitably degraded due to unfavorable device optimization unlike FM VCOs, IM VCOs provide acceptable low-GHz VCO circuit performance. In terms of single-event effects (SEE), the IM VCOs show reduced transient peaks and duration in comparison with conventional FM VCOs. In addition, the performance of the VCOs is analyzed in terms of transient error vector magnitude (TEVM) in an RF receiver (RX) using quadrature phase-shift keying (QPSK) modulation under radiation environment. The IM VCOs in the RX circuit show better reliability under SEE, offering 28.2% lower TEVM at 64 Mb/s data rate., than that of the RX circuit with conventional FM VCOs. Therefore, the application of inverse-mode SiGe-HBT biasing circuits for RF VCOs can be a viable SEE-hardening technique for space-based RF systems. The VCO prototype was fabricated using IHP 130 nm SiGe BiCMOS technology. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Ickhyun | - |
dc.identifier.doi | 10.1109/TNS.2022.3170377 | - |
dc.identifier.scopusid | 2-s2.0-85129579397 | - |
dc.identifier.wosid | 000812532100011 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Nuclear Science, v.69, no.6, pp.1 - 8 | - |
dc.relation.isPartOf | IEEE Transactions on Nuclear Science | - |
dc.citation.title | IEEE Transactions on Nuclear Science | - |
dc.citation.volume | 69 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | 90 NM | - |
dc.subject.keywordPlus | TRANSIENTS | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordAuthor | Current mirrors | - |
dc.subject.keywordAuthor | Frequency modulation | - |
dc.subject.keywordAuthor | Heterojunction bipolar transistors | - |
dc.subject.keywordAuthor | inverse mode | - |
dc.subject.keywordAuthor | pulsed laser | - |
dc.subject.keywordAuthor | radiation effects | - |
dc.subject.keywordAuthor | radiation hardening by design (RHDB) | - |
dc.subject.keywordAuthor | Radio frequency | - |
dc.subject.keywordAuthor | radio frequency (RF) | - |
dc.subject.keywordAuthor | Silicon germanium | - |
dc.subject.keywordAuthor | silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | single-event effects (SEE) | - |
dc.subject.keywordAuthor | single-event transient (SET) | - |
dc.subject.keywordAuthor | Transient analysis | - |
dc.subject.keywordAuthor | two-photon absorption (TPA) | - |
dc.subject.keywordAuthor | voltage-controlled oscillator (VCO) | - |
dc.subject.keywordAuthor | Voltage-controlled oscillators | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9762987 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.