Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects
- Authors
- Mishu, Pujan K. C.; Cho, Moon-Kyu; Khachatrian, Ani; Buchner, Stephen P.; McMorrow, Dale; Paki, Pauline; Cressler, John D.; Song, Ickhyun
- Issue Date
- Jun-2022
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Current mirrors; Frequency modulation; Heterojunction bipolar transistors; inverse mode; pulsed laser; radiation effects; radiation hardening by design (RHDB); Radio frequency; radio frequency (RF); Silicon germanium; silicon-germanium (SiGe) heterojunction bipolar transistor (HBT); single-event effects (SEE); single-event transient (SET); Transient analysis; two-photon absorption (TPA); voltage-controlled oscillator (VCO); Voltage-controlled oscillators
- Citation
- IEEE Transactions on Nuclear Science, v.69, no.6, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Nuclear Science
- Volume
- 69
- Number
- 6
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/170097
- DOI
- 10.1109/TNS.2022.3170377
- ISSN
- 0018-9499
- Abstract
- The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio-frequency (RF) voltage-controlled oscillators (VCOs) have been investigated and the performance of proposed VCOs (IM VCOs) is compared with VCOs with conventional forward-mode (FM) SiGe-HBTs (FM VCOs). Where the high-frequency performance of IM VCOs is inevitably degraded due to unfavorable device optimization unlike FM VCOs, IM VCOs provide acceptable low-GHz VCO circuit performance. In terms of single-event effects (SEE), the IM VCOs show reduced transient peaks and duration in comparison with conventional FM VCOs. In addition, the performance of the VCOs is analyzed in terms of transient error vector magnitude (TEVM) in an RF receiver (RX) using quadrature phase-shift keying (QPSK) modulation under radiation environment. The IM VCOs in the RX circuit show better reliability under SEE, offering 28.2% lower TEVM at 64 Mb/s data rate., than that of the RX circuit with conventional FM VCOs. Therefore, the application of inverse-mode SiGe-HBT biasing circuits for RF VCOs can be a viable SEE-hardening technique for space-based RF systems. The VCO prototype was fabricated using IHP 130 nm SiGe BiCMOS technology.
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