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Nitrogen behaviors in peald-grown sio2 films using n2o plasma reactant and its application in ald-izo tfts

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dc.contributor.authorKim, Dong-Gyu-
dc.contributor.authorYoo, Kwang Su-
dc.contributor.authorKim, Hye-Mi-
dc.contributor.authorPark, Jin-Seong-
dc.date.accessioned2022-09-19T13:40:14Z-
dc.date.available2022-09-19T13:40:14Z-
dc.date.created2022-09-08-
dc.date.issued2022-06-
dc.identifier.issn0097-966X-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171600-
dc.description.abstractWe studied nitrogen (N) behaviors in plasma-enhanced atomic layer deposition (PEALD)-grown silicon dioxide (SiO2) using nitrous oxide (N2O) plasma reactant. The gradually improved breakdown phenomenon is attributed to N contents. However, although increase in the N contents, excess plasma power is degraded electrical characteristics. For applications of the SiO2 films using N2O plasma reactant, we fabricated indium-zinc oxide top-gate thin film transistors with SiO2 gate insulator (G.I). The stable both transfer characteristics and instability results are originated from decrease in oxygen vacancy in active layer by N2O plasma treatment during the G.I deposition.-
dc.language영어-
dc.language.isoen-
dc.publisherJohn Wiley and Sons Inc-
dc.titleNitrogen behaviors in peald-grown sio2 films using n2o plasma reactant and its application in ald-izo tfts-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Jin-Seong-
dc.identifier.doi10.1002/sdtp.15677-
dc.identifier.scopusid2-s2.0-85135610015-
dc.identifier.bibliographicCitationDigest of Technical Papers - SID International Symposium, v.53, no.1, pp.1043 - 1046-
dc.relation.isPartOfDigest of Technical Papers - SID International Symposium-
dc.citation.titleDigest of Technical Papers - SID International Symposium-
dc.citation.volume53-
dc.citation.number1-
dc.citation.startPage1043-
dc.citation.endPage1046-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusAtomic layer deposition-
dc.subject.keywordPlusII-VI semiconductors-
dc.subject.keywordPlusNitrogen-
dc.subject.keywordPlusNitrogen oxides-
dc.subject.keywordPlusNitrogen plasma-
dc.subject.keywordPlusOxide films-
dc.subject.keywordPlusPlasma applications-
dc.subject.keywordPlusPlasma stability-
dc.subject.keywordPlusSilicon oxides-
dc.subject.keywordPlusThin film transistors-
dc.subject.keywordPlusThin films-
dc.subject.keywordPlusZinc oxide-
dc.subject.keywordPlusBreakdown field-
dc.subject.keywordPlusDisplay back-plane-
dc.subject.keywordPlusIndium zinc oxides-
dc.subject.keywordPlusN content-
dc.subject.keywordPlusN2O plasma-
dc.subject.keywordPlusOxide-based TFT-
dc.subject.keywordPlusPlasma reactants-
dc.subject.keywordPlusPlasma-enhanced atomic layer deposition-
dc.subject.keywordPlusPower devices-
dc.subject.keywordPlusSiO2 film-
dc.subject.keywordPlusSilica-
dc.subject.keywordAuthorBreakdown field-
dc.subject.keywordAuthorDisplay back-plane-
dc.subject.keywordAuthorIndium-zinc oxide-
dc.subject.keywordAuthorMemory device-
dc.subject.keywordAuthorN2O plasma-
dc.subject.keywordAuthorOxide-based TFTs-
dc.subject.keywordAuthorPEALD-
dc.subject.keywordAuthorPower device-
dc.subject.keywordAuthorSiO2-
dc.identifier.urlhttps://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.15677-
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