High-Performance p-Channel Tellurium Thin-Film Transistor Applications Fabricated at a Low Temperature of 150 °C

Abstract

Development of high-performance p-channel thin-film transistors (TFTs) can be an essential building block for next-generation display technologies which require a great power efficiency. While an n-channel In GaZnO TFT has been practically demonstrated, the counterparts are still challenging because of their ionic bonding nature. Here we report high-performance p-channel hexagonal tellurium (Te) TFT which exhibits outstanding device performances with a field-effect mobility of 21.2 cm2/Vs, a current modulation ratio of 2.3 × 10s, a subthreshold swing of 0.2 V/dec, and a threshold voltage of -0.3 V. This study shows a strong potential of p-channel Te TFT for next-generation display applications.