High temperature annealing behavior of igzo using plasma enhanced atomic layer deposition

Abstract

In this study, highly oriented crystalline indium-gallium-zinc oxide (IGZO) thin films and its thin film transistors (TFTs) were fabricated using plasma enhanced atomic layer deposition (PEALD). The high temperature (400-700oC) annealing behavior of IGZO manufactured using PEALD was confirmed. As the temperature increases, the crystallization becomes highly oriented in the c-axis direction. However, due to the occurrence of dehydrogenation, the electrical performances and reliability of the device are gradually degraded. If the process of highly ordered IGZO thin film with moderate hydrogen content is secured, it is possible to manufacture oxide TFTs with excellent electrical performances.