Using non-volatile RAM as a write buffer for NAND flash memory-based storage devices

Abstract

Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, nextgeneration NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems. We propose a novel block-based NVRAM write buffer management policy, CLC. Simulation results show that the CLC policy outperforms the traditional policies.