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Using non-volatile RAM as a write buffer for NAND flash memory-based storage devices
- Issue Date
- Sep-2008
- Publisher
- IEEE
- Citation
- 2008 IEEE International Symposium on Modeling, Analysis and Simulation of Computer and Telecommunication Systems, MASCOTS, pp.1 - 3
- Indexed
- SCOPUS
- Journal Title
- 2008 IEEE International Symposium on Modeling, Analysis and Simulation of Computer and Telecommunication Systems, MASCOTS
- Start Page
- 1
- End Page
- 3
- ISSN
- 0000-0000
- Abstract
- Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, nextgeneration NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems. We propose a novel block-based NVRAM write buffer management policy, CLC. Simulation results show that the CLC policy outperforms the traditional policies.
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Related Researcher
- Cha, Jae Hyuk
- COLLEGE OF ENGINEERING (SCHOOL OF COMPUTER SCIENCE)