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Influence of indenter angle on cracking in Si and Ge during nanoindentation

Authors
Jang, Jae-ilPharr, George M.
Issue Date
Sep-2008
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
Nanoindentation; Toughness; Cracking; Semiconductors
Citation
ACTA MATERIALIA, v.56, no.16, pp.4458 - 4469
Indexed
SCIE
SCOPUS
Journal Title
ACTA MATERIALIA
Volume
56
Number
16
Start Page
4458
End Page
4469
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171888
DOI
10.1016/j.actamat.2008.05.005
ISSN
1359-6454
Abstract
The influence of indenter angle on the nanoindentation cracking behavior of single crystal Si and Ge was systematically explored through nanoindentation experiments with a series of triangular pyramidal indenters with different centerline-to-face angles in the range 35.3-85.0 degrees. The relationships between indentation load, crack length and indentation size and their dependence on indenter angle were carefully examined and compared with previous indentation cracking studies. The results are discussed in terms of ways to estimate fracture toughness and indentation cracking threshold loads more precisely through nanoindentation.
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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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