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The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process

Authors
Jeon, HyeongtagWon, Youngdo
Issue Date
Sep-2008
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.93, no.12, pp 1 - 3
Pages
3
Indexed
SCIE
SCOPUS
Journal Title
Applied Physics Letters
Volume
93
Number
12
Start Page
1
End Page
3
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171897
DOI
10.1063/1.2991288
ISSN
0003-6951
1077-3118
Abstract
The plasma enhanced atomic layer deposition process for the HfO2 thin film is modeled as simple reactions between Hf(OH)(3)NH2 and reactive oxygen species. The density functional theory calculation was performed for plausible reaction pathways to construct the reaction profile. While the triplet molecular oxygen is unlikely to form a reactive complex, the singlet molecular oxygen forms the stable adduct that goes through the transition state and completes the reaction pathway to the products. Either two singlet or two triplet oxygen atoms make the singlet adduct complex, which follows the same pathway to the product as the singlet molecular oxygen reacts.
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