Carrier transport mechanisms of nonvolatile memory devices based on nanocomposites consisting of ZnO nanoparticles with polymethylmethacrylate nanocomposites sandwiched between two C-60 layers

Abstract

Transmission electron microscope images showed that ZnO nanoparticles were formed in a polymethylmethacrylate (PMMA) layer. Current-voltage (I-V) curves for the Al/C-60/ZnO nanoparticles embedded in the PMMA layer/C-60/indium tin oxide (ITO) device at 300 K showed a current bistability with a large on/off ratio of 104, which was much larger than the on/off ratio of the device without C-60 layers, indicative of significant enhancement of memory storage. Carrier transport mechanisms of the memory effects for the Al/C-60/ZnO nanoparticles embedded in the PMMA layer/C-60/ITO device are described on the basis of the I-V results.