Carrier transport mechanisms of nonvolatile memory devices based on nanocomposites consisting of ZnO nanoparticles with polymethylmethacrylate nanocomposites sandwiched between two C-60 layers
- Authors
- Park, Kyu Ha; Jung, Jae Hun; Li, Fushan; Son, Dong Ick; Kim, Tae Whan
- Issue Date
- Sep-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.13, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 13
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171899
- DOI
- 10.1063/1.2992203
- ISSN
- 0003-6951
- Abstract
- Transmission electron microscope images showed that ZnO nanoparticles were formed in a polymethylmethacrylate (PMMA) layer. Current-voltage (I-V) curves for the Al/C-60/ZnO nanoparticles embedded in the PMMA layer/C-60/indium tin oxide (ITO) device at 300 K showed a current bistability with a large on/off ratio of 104, which was much larger than the on/off ratio of the device without C-60 layers, indicative of significant enhancement of memory storage. Carrier transport mechanisms of the memory effects for the Al/C-60/ZnO nanoparticles embedded in the PMMA layer/C-60/ITO device are described on the basis of the I-V results.
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