Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Seol, Young-Gug | - |
dc.contributor.author | Noh, Haw Young | - |
dc.contributor.author | Lee, Sang Sul | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Lee, Nae Eung | - |
dc.date.accessioned | 2022-10-07T10:15:42Z | - |
dc.date.available | 2022-10-07T10:15:42Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171984 | - |
dc.description.abstract | The incorporation of an ultrathin, atomic layer deposited HfO2 layer in between the spin-coated poly-4-vinyl phenol (PVP) organic layers in the laminated multilayer gate dielectric for pentacene organic thin film transistors on a flexible substrate reduced the gate leakage current by three to four orders of magnitude and thereby significantly enhanced the current on/off ratio up to congruent to 10(4)-fold. Cyclic bending testing indicated that the electrical characteristics of the device with the PVP/HfO2/PVP trilayer gate dielectric stack were superior to those of the device with the single PVP gate dielectrics due to the improved mechanical and electrical stabilities of the gate dielectric. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1063/1.2956407 | - |
dc.identifier.scopusid | 2-s2.0-47249112517 | - |
dc.identifier.wosid | 000258184600061 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.1, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 93 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2956407 | - |
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