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Unusual transport characteristics of nitrogen-doped single-walled carbon nanotubes

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dc.contributor.authorMin, Sep-
dc.contributor.authorBae, Eun Ju-
dc.contributor.authorKim, Un Jeong-
dc.contributor.authorLee, Eun Hong-
dc.contributor.authorPark, Noejung-
dc.contributor.authorHwang, Cheol Seong-
dc.contributor.authorPark, Wanjun-
dc.date.accessioned2022-10-07T10:16:12Z-
dc.date.available2022-10-07T10:16:12Z-
dc.date.issued2008-07-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171989-
dc.description.abstractElectrical transport characteristics of nitrogen-doped single-walled carbon nanotubes (N-SWCNTs), in which the nitrogen dopant is believed to form a pyridinelike bonding configuration, are studied with the field effect transistor operations. Contrary to the expectation that the nitrogen atoms may induce a n-type doping, the electrical transports through our N-SWCNTs are either ambipolar in vacuum or p-type in air. Through the first-principles electronic structure calculations, we show that the nitrogen dopant indeed favors the pyridinelike configuration and the Fermi level of the pyridinelike N-SWCNT is almost at the intrinsic level.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Institute of Physics-
dc.titleUnusual transport characteristics of nitrogen-doped single-walled carbon nanotubes-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.2965805-
dc.identifier.scopusid2-s2.0-49149102964-
dc.identifier.wosid000258179800094-
dc.identifier.bibliographicCitationApplied Physics Letters, v.93, no.4, pp 1 - 3-
dc.citation.titleApplied Physics Letters-
dc.citation.volume93-
dc.citation.number4-
dc.citation.startPage1-
dc.citation.endPage3-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusELECTRONIC-PROPERTIES-
dc.subject.keywordPlusTUBULES-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.2965805-
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