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Unusual transport characteristics of nitrogen-doped single-walled carbon nanotubes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Min, Sep | - |
| dc.contributor.author | Bae, Eun Ju | - |
| dc.contributor.author | Kim, Un Jeong | - |
| dc.contributor.author | Lee, Eun Hong | - |
| dc.contributor.author | Park, Noejung | - |
| dc.contributor.author | Hwang, Cheol Seong | - |
| dc.contributor.author | Park, Wanjun | - |
| dc.date.accessioned | 2022-10-07T10:16:12Z | - |
| dc.date.available | 2022-10-07T10:16:12Z | - |
| dc.date.issued | 2008-07 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171989 | - |
| dc.description.abstract | Electrical transport characteristics of nitrogen-doped single-walled carbon nanotubes (N-SWCNTs), in which the nitrogen dopant is believed to form a pyridinelike bonding configuration, are studied with the field effect transistor operations. Contrary to the expectation that the nitrogen atoms may induce a n-type doping, the electrical transports through our N-SWCNTs are either ambipolar in vacuum or p-type in air. Through the first-principles electronic structure calculations, we show that the nitrogen dopant indeed favors the pyridinelike configuration and the Fermi level of the pyridinelike N-SWCNT is almost at the intrinsic level. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Unusual transport characteristics of nitrogen-doped single-walled carbon nanotubes | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.2965805 | - |
| dc.identifier.scopusid | 2-s2.0-49149102964 | - |
| dc.identifier.wosid | 000258179800094 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.93, no.4, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 93 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
| dc.subject.keywordPlus | TUBULES | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2965805 | - |
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