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Atomic arrangements of (Ga1-xMnx)N nanorods grown on Al2O3 substrates
- Authors
- Lee, Ki-Hyoung; Lee, Jeong Yong; Jung, Jae Hun; Kim, Tae Whan; Jeon, Hee Change; Kang, Tae Won
- Issue Date
- Apr-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.14, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 14
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
- Abstract
- X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-xMnx)N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-xMnx)N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-xMnx)N nanorods grown on the Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.
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