Cited 0 time in
Multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in polyimide layers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Tae Whan | - |
| dc.contributor.author | Jung, J. H. | - |
| dc.contributor.author | Yoon, Chong Seung | - |
| dc.contributor.author | Kim, Young Ho | - |
| dc.date.accessioned | 2022-10-07T10:44:56Z | - |
| dc.date.available | 2022-10-07T10:44:56Z | - |
| dc.date.issued | 2008-01 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172188 | - |
| dc.description.abstract | Capacitance-voltage curves for the Al/polyimide (PI)/multilayered Ni1-xFex nanoparticle array/PI/p-Si (100) devices at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of sweep voltage, indicative of the variations in the charged electron number in the multiple-stacked Ni1-xFex nanoparticle arrays in the floating gate. Current-voltage results showed that the electron charging and discharging in the Ni1-xFex nanoparticles were attributed to thermionic emission and Fowler-Nordheim tunneling, respectively. The multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the experimental results. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in polyimide layers | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.2838300 | - |
| dc.identifier.scopusid | 2-s2.0-38849180251 | - |
| dc.identifier.wosid | 000252860400044 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.92, no.4, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 92 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | QUANTUM-DOT | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordPlus | GATE | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2838300 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
