Multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in polyimide layers
- Authors
- Kim, Tae Whan; Jung, J. H.; Yoon, Chong Seung; Kim, Young Ho
- Issue Date
- Jan-2008
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.92, no.4, pp 1 - 3
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 92
- Number
- 4
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172188
- DOI
- 10.1063/1.2838300
- ISSN
- 0003-6951
1077-3118
- Abstract
- Capacitance-voltage curves for the Al/polyimide (PI)/multilayered Ni1-xFex nanoparticle array/PI/p-Si (100) devices at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of sweep voltage, indicative of the variations in the charged electron number in the multiple-stacked Ni1-xFex nanoparticle arrays in the floating gate. Current-voltage results showed that the electron charging and discharging in the Ni1-xFex nanoparticles were attributed to thermionic emission and Fowler-Nordheim tunneling, respectively. The multilevel charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the experimental results.
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