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Direct patterning of carbon nanotube network devices by selective vacuum filtration

Authors
Lim, ChaehyunMin, Dong HunLee, Seung Beck
Issue Date
Dec-2007
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.91, no.24, pp 1 - 4
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
Applied Physics Letters
Volume
91
Number
24
Start Page
1
End Page
4
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172204
DOI
10.1063/1.2824575
ISSN
0003-6951
1077-3118
Abstract
We report on a method which allows direct patterning of density controlled carbon nanotube network (NTN) devices during network formation. By lithographically patterning photoresist on the filter membrane, the nanotubes in suspension were guided to the exposed pattern areas of the filter surface during vacuum filtration allowing in situ device formation. The NTNs were transferred to an elastomer substrate by directly curing polydimethylsiloxane on its surface. We compared electrical characteristics of NTN patterns fabricated simultaneously using this method and found that the different NTNs with equal nanotube density showed reproducible characteristics.
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