Atomic-level investigation of Al and Ni thin film growth on Ni(111) surface: Molecular dynamics simulation
- Authors
- Lee, Soon Gun; Chung, Yong Chae
- Issue Date
- Sep-2007
- Publisher
- Elsevier BV
- Keywords
- growth morphology; molecular dynamics simulation; Ni/Ni(111); Al/Ni(111)
- Citation
- Applied Surface Science, v.253, no.22, pp 8896 - 8900
- Pages
- 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Surface Science
- Volume
- 253
- Number
- 22
- Start Page
- 8896
- End Page
- 8900
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172248
- DOI
- 10.1016/j.apsusc.2007.05.002
- ISSN
- 0169-4332
1873-5584
- Abstract
- Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode. On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between At and Ni deposition on Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.