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Atomic-level investigation of Al and Ni thin film growth on Ni(111) surface: Molecular dynamics simulation

Authors
Lee, Soon GunChung, Yong Chae
Issue Date
Sep-2007
Publisher
Elsevier BV
Keywords
growth morphology; molecular dynamics simulation; Ni/Ni(111); Al/Ni(111)
Citation
Applied Surface Science, v.253, no.22, pp 8896 - 8900
Pages
5
Indexed
SCIE
SCOPUS
Journal Title
Applied Surface Science
Volume
253
Number
22
Start Page
8896
End Page
8900
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172248
DOI
10.1016/j.apsusc.2007.05.002
ISSN
0169-4332
1873-5584
Abstract
Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode. On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between At and Ni deposition on Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.
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