Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric
- Authors
- Lee, Kwang H.; Choi, Jeong-M.; Im, Seongil; Lee, Byoung H.; Im, Kyo K.; Sung, Myung M.; Lee, Seungjun
- Issue Date
- Sep-2007
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.91, no.12, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 91
- Number
- 12
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172251
- DOI
- 10.1063/1.2786595
- ISSN
- 0003-6951
1077-3118
- Abstract
- The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm-thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (AlOx)-self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n(+)-Si substrate. The AlOx-SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF/cm(2) on ITO glass and on n(+)-Si substrate, respectively, along with a high dielectric strength of 4 MV/cm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm(2)/V s, operating at -3 V with an on/off current ratio of similar to 10(3). Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of similar to 5.
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