Dependence of the microstructural properties on the substrate temperature in strained CdTe (100)/GaAs (100) heterostructures

Abstract

CdTe thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy at various temperatures. The bright-field transmission electron microscopy (TEM) images and the high-resolution TEM (HRTEM) images showed that the crystallinity of CdTe epilayers grown on GaAs substrates was improved by increasing the substrate temperature. The result of selected-area electron diffraction pattern (SADP) showed that the orientation of the grown CdTe thin films was the (1 0 0) orientation. The lattice constant the strain, and the stress of the CdTe thin film grown on the GaAs substrate were determined from the SADP result. Based on the SADP and HRTEM results, a possible atomic arrangement for the CdTe/GaAs heterostructure is presented.