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Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies

Authors
Ahn, Ju HyunCai, GangriMane, Rajararn S.Todkar, V. V.Shaikh, Arif V.Chung, HoeilYoon, Moon YoungHan, Sung Hwan
Issue Date
Aug-2007
Publisher
ELSEVIER
Keywords
electrochemical synthesis; CdInSe4 thin films; XRD; SEM; AFM; photoelectrochemical cell
Citation
APPLIED SURFACE SCIENCE, v.253, no.21, pp.8588 - 8591
Indexed
SCIE
SCOPUS
Journal Title
APPLIED SURFACE SCIENCE
Volume
253
Number
21
Start Page
8588
End Page
8591
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172265
DOI
10.1016/j.apsusc.2007.04.081
ISSN
0169-4332
Abstract
Electrochemical synthesis of photoactive cadmium-indium-selenide (CdIn2Se4) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400-500 nm in sizes composed of large number of small (similar to 30-40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn2Se4 film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm(2).
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