Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies
- Authors
- Ahn, Ju Hyun; Cai, Gangri; Mane, Rajararn S.; Todkar, V. V.; Shaikh, Arif V.; Chung, Hoeil; Yoon, Moon Young; Han, Sung Hwan
- Issue Date
- Aug-2007
- Publisher
- ELSEVIER
- Keywords
- electrochemical synthesis; CdInSe4 thin films; XRD; SEM; AFM; photoelectrochemical cell
- Citation
- APPLIED SURFACE SCIENCE, v.253, no.21, pp.8588 - 8591
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 253
- Number
- 21
- Start Page
- 8588
- End Page
- 8591
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172265
- DOI
- 10.1016/j.apsusc.2007.04.081
- ISSN
- 0169-4332
- Abstract
- Electrochemical synthesis of photoactive cadmium-indium-selenide (CdIn2Se4) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400-500 nm in sizes composed of large number of small (similar to 30-40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn2Se4 film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm(2).
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