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Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer
- Authors
- Kim, Tae Whan; Shin, Jae Won; Lee, Jeong Yong; Jung, Jae Hun; Lee, Jung Wook; Choi, Won Kook; Jin, Sungho
- Issue Date
- Jan-2007
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.90, no.5, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 90
- Number
- 5
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
1077-3118
- Abstract
- Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.
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