Solid-phase hetero epitaxial growth of alpha-phase formamidinium perovskiteopen access
- Authors
- Lee, Jin-Wook; Tan, Shaun; Han, Tae-Hee; Wang, Rui; Zhang, Lizhi; Park, Changwon; Yoon, Mina; Choi, Chungseok; Xu, Mingjie; Liao, Michael E.; Lee, Sung-Joon; Nuryyeva, Selbi; Zhu, Chenhui; Huynh, Kenny; Goorsky, Mark S.; Huang, Yu; Pan, Xiaoqing; Yang, Yang
- Issue Date
- Nov-2020
- Publisher
- NATURE RESEARCH
- Citation
- NATURE COMMUNICATIONS, v.11, no.1, pp.1 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- NATURE COMMUNICATIONS
- Volume
- 11
- Number
- 1
- Start Page
- 1
- End Page
- 11
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1724
- DOI
- 10.1038/s41467-020-19237-3
- Abstract
- Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI(3)) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI(3) from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI(3) showed efficiencies and stabilities superior to those of devices fabricated without NHE. Though literature reports metal halide perovskite epitaxial growth on various substrates, controlling film growth for device applications remains a challenge. Here, the authors report kinetic-controlled growth of halide perovskite thin films on various substrates via layered perovskite templates.
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