Impurity effects on the laser-induced crystallization of thin amorphous silicon film on glass substrate
- Authors
- Kim, Pilkyu; Moon, Seung-Jae; Jeong, Sungho
- Issue Date
- Dec-2010
- Publisher
- SPRINGER HEIDELBERG
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.101, no.4, pp.671 - 675
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 101
- Number
- 4
- Start Page
- 671
- End Page
- 675
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173395
- DOI
- 10.1007/s00339-010-5987-3
- ISSN
- 0947-8396
- Abstract
- Crystallization of 100 nm thick amorphous silicon (a-Si) films deposited on glass substrates was carried out using a dual-green-laser method. Depending on a-Si deposition method, either low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD), the density of impurities such as Al, K, and Na within the a-Si thin films significantly varied. For the high impurity case of LPCVD, grains of 200-300 nm in size were obtained, whereas for the PECVD case a maximum grain size of about 4 mu m was achieved, satisfying the requirements for applications in commercial TFT devices. These results confirm that for the use of glass substrates in polycrystallization of a-Si, controlling the impurity density during substrate preparation is critical.
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