Electrical Bistabilities and Memory Mechanisms of Organic Bistable Devices Fabricated Utilizing SnO2 Nanoparticles Embedded in a Poly(methyl methacrylate) Layer
- Authors
- Kwak, Jin Ku; Yun, Dong Yeol; Son, Dong Ick; Jung, Jae Hun; Lee, Dea Uk; Kim, Tae Whan
- Issue Date
- Nov-2010
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Organic Bistable Devices; Carrier Transport Mechanisms; Current Bistability; SnO2 Nanoparticle; Poly(methyl methacrylate)
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.10, no.11, pp.7735 - 7738
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 10
- Number
- 11
- Start Page
- 7735
- End Page
- 7738
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173495
- DOI
- 10.1166/jnn.2010.2813
- ISSN
- 1533-4880
- Abstract
- Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) (PMMA) polymer layer were formed by using a spin coating method. Transmission electon microscopy images and photoluminescence spectra showed that synethized SnO2 nanoparticles were randomly distributed in the dibutyl ehter solution. Current-voltage (I-V) measurements on the Al/SnO2 nanoparticles embedded in PMMA layer/ITO devices at 300 K showed current bistability due to the existence of SnO2 nanoparticles. Current-time (I-t) results showed the memory retention characteristic of the device. Carrier transport mechanisms of the device are described on the basis of the I-V experimental results and electronic structures.
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