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Write-Aware Buffer Management Policy for Performance and Durability Enhancement in NAND Flash Memory

Authors
Jin, XinJung, SanghyukSong, Yong Ho
Issue Date
Nov-2010
Publisher
Institute of Electrical and Electronics Engineers
Keywords
NAND flash memory; buffer cache; write-intensive; long-term
Citation
IEEE Transactions on Consumer Electronics, v.56, no.4, pp 2393 - 2399
Pages
7
Indexed
SCI
SCIE
SCOPUS
Journal Title
IEEE Transactions on Consumer Electronics
Volume
56
Number
4
Start Page
2393
End Page
2399
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173513
DOI
10.1109/TCE.2010.5681118
ISSN
0098-3063
1558-4127
Abstract
The popularity of NAND flash memory has been growing rapidly in recent years, but the SSD (Solid-State Disk) has shown limited success in its battle against the hard disk. Besides the high price, SSD suffers performance degradation under random write requests, due to the intrinsic weak points of NAND flash: erase-before-write, asymmetric read/write access time, and limited program/erase cycles. In order to overcome these drawbacks, many buffer replacement algorithms have been proposed. However, considering the cost of write operations, it would be beneficial to have dirty pages updated before being flushed to flash memory. In this paper, we propose a new buffer management scheme to retain write-intensive pages in the buffer, and we confirm its effectiveness by applying it to one of the existing buffer management schemes. The simulation results indicate that the proposed scheme reduces up to 30% of the write count, and, therefore, extends the lifetime of NAND flash memories. (1)
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